Broadband Low Noise Amp 0.45dB NF 0.1GHz to 2GHz 20dB Gain with Bias TeeDesigned by LOTUS in United States of America
LNA100M2GBT is a high-linearity, ultra low noise amplifier in a small 1-1/8”x15/16”x0.59” shielded RF enclosure (PN: 6UED2W6S1P2). At 900 MHz, the amplifier typically provides 20 dB gain, +36 dBm O...Read More…
LNA100M2GBT is a high-linearity, ultra low noise amplifier in a small 1-1/8”x15/16”x0.59” shielded RF enclosure (PN: 6UED2W6S1P2). At 900 MHz, the amplifier typically provides 20 dB gain, +36 dBm OIP3 at a 68 mA bias setting, and 0.45 dB noise figure. The LNA can be biased from a single supply +3.3V to +5V. The DC power is fed through output SMA connector. It combines Bias Tee and LNA in one with DC Power via RF output port.
Listed pictures include Product Picture and S Parameter from 100M to 2GHz. SKU#: AK20_002K. This LNA includes the RF Enclosure as shown in picture.
Proudly Made in USA by Lotus Communication Systems, INC. in Massachusetts.
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