FRAM or Ferroelectric RAM basically stores non-volatile data and this memory chip is similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FRAM offers significant advantages over traditional flash memory and EEPROMs such as very-low power usage, faster write performance and a much greater maximum number of write-erase cycles.
If your project involves wearables dependent on a battery, or a wireless IoT sensor node running off a solar panel, you might want to consider a low-power EEPROM/FRAM alternative instead of an SDcard that eats batteries for breakfast.
Please download the available source code that was developed based on STM's Nucleo-F411 board Do take note that the code can also be utilized for the FM24VN10 model, with provides additional unique serial number
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